Bulk and metastable defects in CuIn1-xGaxSe2 thin films using drive-level capacitance profiling
Identifieur interne : 00A828 ( Main/Repository ); précédent : 00A827; suivant : 00A829Bulk and metastable defects in CuIn1-xGaxSe2 thin films using drive-level capacitance profiling
Auteurs : RBID : Pascal:04-0045988Descripteurs français
- Pascal (Inist)
- 7155H, 8460J, 7361L, 6182F, 6180B, 7350, Etude expérimentale, Zinc composé, Cadmium composé, Cuivre composé, Indium composé, Gallium composé, Semiconducteur ternaire, Couche mince semiconductrice, Etat défaut, DLTS, Mesure capacité électrique, Cellule solaire, Molybdène, Effet faisceau laser, Etat métastable, Revêtement déposé sous vide, Densité porteur charge.
- Wicri :
- concept : Molybdène.
English descriptors
- KwdEn :
- Cadmium compounds, Capacitance measurement, Carrier density, Copper compounds, DLTS, Defect states, Experimental study, Gallium compounds, Indium compounds, Laser beam effects, Metastable states, Molybdenum, Semiconductor thin films, Solar cells, Ternary semiconductors, Vacuum deposited coatings, Zinc compounds.
Abstract
The drive-level capacitance profiling technique has been applied to ZnO/CdS/CuIn1-xGaxSe2/Mo solar cell devices, in order to study properties of defects in the CuIn1-xGaxSe2 film. Properties studied include the spatial uniformity, bulk defect response, carrier density, and light-induced metastable effects. These results indicate that previous estimates of carrier densities, from C-V profiling, may be significantly overestimated. In addition, a defect response previously thought to be located at the interface is observed to exist throughout the bulk material. Finally, an infrared light-soaking treatment is demonstrated to induce metastable changes in the bulk CuIn1-xGaxSe2 film. Hence, the drive-level capacitance profiling technique provides valuable insights into these films. Herein, the technique itself is fully explained, compared to other junction capacitance methods, and its utility is demonstrated using numerical simulation. © 2004 American Institute of Physics.
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Heath</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, University of Oregon, Eugene, Oregon 97403</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oregon</region></placeName><wicri:cityArea>Department of Physics, University of Oregon, Eugene</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Institute of Energy Conversion, University of Delaware, Newark, Delaware 19716</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Delaware</region></placeName><wicri:cityArea>Institute of Energy Conversion, University of Delaware, Newark</wicri:cityArea></affiliation></author><author><name sortKey="Cohen, J David" uniqKey="Cohen J">J. David Cohen</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, University of Oregon, Eugene, Oregon 97403</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oregon</region></placeName><wicri:cityArea>Department of Physics, University of Oregon, Eugene</wicri:cityArea></affiliation></author><author><name sortKey="Shafarman, William N" uniqKey="Shafarman W">William N. Shafarman</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, University of Oregon, Eugene, Oregon 97403</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oregon</region></placeName><wicri:cityArea>Department of Physics, University of Oregon, Eugene</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">04-0045988</idno><date when="2004-02-01">2004-02-01</date><idno type="stanalyst">PASCAL 04-0045988 AIP</idno><idno type="RBID">Pascal:04-0045988</idno><idno type="wicri:Area/Main/Corpus">00C119</idno><idno type="wicri:Area/Main/Repository">00A828</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Cadmium compounds</term><term>Capacitance measurement</term><term>Carrier density</term><term>Copper compounds</term><term>DLTS</term><term>Defect states</term><term>Experimental study</term><term>Gallium compounds</term><term>Indium compounds</term><term>Laser beam effects</term><term>Metastable states</term><term>Molybdenum</term><term>Semiconductor thin films</term><term>Solar cells</term><term>Ternary semiconductors</term><term>Vacuum deposited coatings</term><term>Zinc compounds</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7155H</term><term>8460J</term><term>7361L</term><term>6182F</term><term>6180B</term><term>7350</term><term>Etude expérimentale</term><term>Zinc composé</term><term>Cadmium composé</term><term>Cuivre composé</term><term>Indium composé</term><term>Gallium composé</term><term>Semiconducteur ternaire</term><term>Couche mince semiconductrice</term><term>Etat défaut</term><term>DLTS</term><term>Mesure capacité électrique</term><term>Cellule solaire</term><term>Molybdène</term><term>Effet faisceau laser</term><term>Etat métastable</term><term>Revêtement déposé sous vide</term><term>Densité porteur charge</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Molybdène</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The drive-level capacitance profiling technique has been applied to ZnO/CdS/CuIn<sub>1-x</sub>Ga<sub>x</sub>Se<sub>2</sub>/Mo solar cell devices, in order to study properties of defects in the CuIn<sub>1-x</sub>Ga<sub>x</sub>Se<sub>2</sub> film. Properties studied include the spatial uniformity, bulk defect response, carrier density, and light-induced metastable effects. These results indicate that previous estimates of carrier densities, from C-V profiling, may be significantly overestimated. In addition, a defect response previously thought to be located at the interface is observed to exist throughout the bulk material. Finally, an infrared light-soaking treatment is demonstrated to induce metastable changes in the bulk CuIn<sub>1-x</sub>Ga<sub>x</sub>Se<sub>2</sub> film. Hence, the drive-level capacitance profiling technique provides valuable insights into these films. Herein, the technique itself is fully explained, compared to other junction capacitance methods, and its utility is demonstrated using numerical simulation. © 2004 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>95</s2></fA05><fA06><s2>3</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Bulk and metastable defects in CuIn<sub>1-x</sub>Ga<sub>x</sub>Se<sub>2</sub> thin films using drive-level capacitance profiling</s1></fA08><fA11 i1="01" i2="1"><s1>HEATH (Jennifer T.)</s1></fA11><fA11 i1="02" i2="1"><s1>COHEN (J. David)</s1></fA11><fA11 i1="03" i2="1"><s1>SHAFARMAN (William N.)</s1></fA11><fA14 i1="01"><s1>Department of Physics, University of Oregon, Eugene, Oregon 97403</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="02"><s1>Institute of Energy Conversion, University of Delaware, Newark, Delaware 19716</s1></fA14><fA20><s1>1000-1010</s1></fA20><fA21><s1>2004-02-01</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>126</s2></fA43><fA44><s0>8100</s0><s1>© 2004 American Institute of Physics. 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Finally, an infrared light-soaking treatment is demonstrated to induce metastable changes in the bulk CuIn<sub>1-x</sub>Ga<sub>x</sub>Se<sub>2</sub> film. Hence, the drive-level capacitance profiling technique provides valuable insights into these films. 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